| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor memory device which can be manufactured with micro-miniaturization and a low cost. SOLUTION: A first select transistor 22, one end of which is connected to one end of a cell transistor column, comprises a stack of a first conductive film 52, inter-electrode insulating film 53, and second conductive film 54, and source/drain diffusion layers 55. A second select transistor 23 is connected between the other end of the first select transistor and a bit line 15, and comprises a stack of a first conductive film 62, inter-electrode insulating film 63, second conductive film 64, and source/drain diffusion layers 65. A third select transistor 13 is connected between the other end of the cell-transistor column and a source line. In one out of the first and second select transistors, the first conductive film and the second conductive film are connected, and in the other, the first conductive film and the second conductive film are electrically isolated. The second conductive film of the other out of the first and second select transistors is connected to the first conductive film of another select transistor. COPYRIGHT: (C)2008,JPO&INPIT
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