发明名称 Semiconductor device comprising electromigration prevention film and manufacturing method thereof
摘要 A semiconductor device includes a semiconductor substrate, a plurality of wiring lines which are provided on one side of the semiconductor substrate and which have connection pad portions, and a plurality of columnar electrodes respectively provided on the connection pad portions of the wiring lines, each of the columnar electrodes including an outer peripheral surface and a top surface. An electromigration prevention film is provided on at least the surfaces of the wiring lines. A sealing film is provided around the outer periphery surfaces of the columnar electrodes.
申请公布号 US2008191357(A1) 申请公布日期 2008.08.14
申请号 US20080009719 申请日期 2008.01.22
申请人 CASIO COMPUTER CO., LTD. 发明人 KOUNO ICHIRO;WAKABAYASHI TAKESHI;MIHARA ICHIRO
分类号 H01L23/48 主分类号 H01L23/48
代理机构 代理人
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