发明名称 |
METHOD OF FABRICATION OF HIGHLY HEAT DISSIPATIVE SUBSTRATES |
摘要 |
<p>The invention relates to a method for fabricating a composite structure having heat dissipation properties greater than a bulk single crystal silicon structure having the same dimensions, the structure comprising a support substrate, a top layer and an oxide layer between the support substrate and the top layer, the method comprising the steps of: a) providing a top layer made of a crystalline material, b) bonding the top layer with a support substrate made of a polycrystalline material having high heat dissipation properties, such that an oxide layer is formed at the bonding interface, in order to obtain said structure, characterized in that it further comprises a heat treatment of the structure in an inert or reducing atmosphere at a predetermined temperature and a predetermined duration to increase the heat dissipation properties by dissolving at least a part of the oxide layer.</p> |
申请公布号 |
WO2008096194(A1) |
申请公布日期 |
2008.08.14 |
申请号 |
WO2007IB00950 |
申请日期 |
2007.02.08 |
申请人 |
S.O.I.TEC SILICON ON INSULATOR TECHNOLOGIES;KONONCHUK, OLEG;LETERTRE, FABRICE;LANGER, ROBERT |
发明人 |
KONONCHUK, OLEG;LETERTRE, FABRICE;LANGER, ROBERT |
分类号 |
H01L21/762 |
主分类号 |
H01L21/762 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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