Verfahren zur Herstellung einer haftfähigen Schicht auf einem Halbleiterkörper

摘要

The method involves clearing away a thin layer near the surface within the range of the surface (101) of the semiconductor body (100), which is coated, by sputtering. A layer is applied on the latter surface, within which the layer near the surface was cleared away. The layer is an amorphous carbon layer or an amorphous semiconductor layer.