发明名称 CONTROLLED GROWTH OF LARGER HETEROJUNCTION INTERFACE AREA FOR ORGANIC PHOTOSENSITIVE DEVICES
摘要 An optoelectronic device and a method of fabricating a photosensitive opt oelectronic device includes depositing a first organic semiconductor materia l on a first electrode to form a continuous first layer having protrusions, a side of the first layer opposite the first electrode having a surface area at least three times greater than an underlying lateral cross-sectional are a; depositing a second organic semiconductor material directly on the first layer to form a discontinuous second layer, portions of the first layer rema ining exposed; depositing a third organic semiconductor material directly on the second layer to form a discontinuous third layer, portions of at least the second layer remaining exposed; depositing a fourth organic semiconducto r material on the third layer to form a continuous fourth layer, filling any exposed gaps and recesses in the first, second, and third layers; and depos iting a second electrode on the fourth layer, wherein at least one of the fi rst electrode and the second electrode is transparent, and the first and thi rd organic semiconductor materials are both of a donor-type or an acceptor-t ype relative to second and fourth organic semiconductor materials, which are of the other material type.
申请公布号 CA2658166(A1) 申请公布日期 2008.08.14
申请号 CA20072658166 申请日期 2007.07.10
申请人 THE REGENTS OF THE UNIVERSITY OF MICHIGAN;THE TRUSTEES OF PRINCETON UNIVERSITY 发明人 YANG, FAN;FORREST, STEPHEN R.
分类号 H01L51/42;H01L51/00 主分类号 H01L51/42
代理机构 代理人
主权项
地址