发明名称 ORGANIC FIELD EFFECT TRANSISTOR
摘要 PROBLEM TO BE SOLVED: To provide an organic field effect transistor whose current density is improved by improving the order property of molecules in elements even in a web process. SOLUTION: This field effect transistor having an organic semiconductor layer including at least one type of organic semiconductor materials on a substrate, MnO<SB>2</SB>particles are contained in the semiconductor layer so that it is possible to obtain a field effect transistor whose current density is improved. COPYRIGHT: (C)2008,JPO&INPIT
申请公布号 JP2008187096(A) 申请公布日期 2008.08.14
申请号 JP20070020921 申请日期 2007.01.31
申请人 NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL & TECHNOLOGY 发明人 ITAKURA ATSUSHI;CHIKAMATSU MASAYUKI;YOSHIDA YUJI;AZUMI REIKO;YATSUSE KIYOSHI
分类号 H01L51/30;H01L29/786;H01L51/05;H01L51/40 主分类号 H01L51/30
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