发明名称 |
ORGANIC FIELD EFFECT TRANSISTOR |
摘要 |
PROBLEM TO BE SOLVED: To provide an organic field effect transistor whose current density is improved by improving the order property of molecules in elements even in a web process. SOLUTION: This field effect transistor having an organic semiconductor layer including at least one type of organic semiconductor materials on a substrate, MnO<SB>2</SB>particles are contained in the semiconductor layer so that it is possible to obtain a field effect transistor whose current density is improved. COPYRIGHT: (C)2008,JPO&INPIT
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申请公布号 |
JP2008187096(A) |
申请公布日期 |
2008.08.14 |
申请号 |
JP20070020921 |
申请日期 |
2007.01.31 |
申请人 |
NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL & TECHNOLOGY |
发明人 |
ITAKURA ATSUSHI;CHIKAMATSU MASAYUKI;YOSHIDA YUJI;AZUMI REIKO;YATSUSE KIYOSHI |
分类号 |
H01L51/30;H01L29/786;H01L51/05;H01L51/40 |
主分类号 |
H01L51/30 |
代理机构 |
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地址 |
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