| 摘要 |
PROBLEM TO BE SOLVED: To provide a trench gate type semiconductor device which can be manufactured without generating any leak path and with a little manhour, and secures the embedding quality of STI oxide films. SOLUTION: The trench gate type semiconductor device has a silicon substrate 1, an STI (oxide film 9) formed in a groove portion 17 for STI, and a gate electrode formed via a gate insulating film 4 in a gate trench 3 formed on the surface of the active region of the silicon substrate 1. The depth of the groove portion 17 for STI which is measured from the surface of the silicon substrate 1 is not smaller than the depth of the gate trench 3. The groove portion 17 for STI has also a first region whose side surface (side-surface upper portion 171) exhibits substantially a vertical shape, and a second region following the first region whose side surface (side-surface lower portion 172) exhibits a forward taper shape. COPYRIGHT: (C)2008,JPO&INPIT
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