THIN-FILM SEMICONDUCTOR DEVICE AND ITS MANUFACTURING METHOD

摘要

PROBLEM TO BE SOLVED: To provide a manufacturing method of a thin-film semiconductor device capable of keeping an interface between a gate insulation film and a thin-film conductor layer under good conditions free from the influence of formation of a source/drain electrode and thereby having a fine bottom-gate-bottom-contact type thin-film transistor structure with good characteristics. SOLUTION: A first gate insulation film 7-1 is formed to cover a gate electrode 5 formed on a substrate 3, and a pair of source/drain electrodes 9 is formed on the first gate insulation film 7-1. Thereafter, a second gate insulation film 7-2 is selectively formed only on the first gate insulation film 7-1 exposed from the electrodes 9. Then, a thin-film semiconductor layer 11 continuously covering up to the first gate insulation film 7-1 from the source-drain electrodes 9 via the second gate insulation film 7-2 in contact with the electrodes 9 is formed, thereby manufacturing the thin-film semiconductor device 1. COPYRIGHT: (C)2008,JPO&INPIT