发明名称 CMOS IMAGE SENSOR AND ITS MANUFACTURING METHOD
摘要 PROBLEM TO BE SOLVED: To provide a CMOS image sensor for preventing attenuation of light reaching a photo diode region and improving a drop in sensitivity due to a variation in thickness of a passivation film. SOLUTION: A surface layer of the passivation film is etched back together with SOG or a resist on the passivation film on the photo diode region after coating the SOG or resist, thereby eliminating unevenness on the surface of the passivation film and optically flattening. COPYRIGHT: (C)2008,JPO&INPIT
申请公布号 JP2008186880(A) 申请公布日期 2008.08.14
申请号 JP20070017392 申请日期 2007.01.29
申请人 SEIKO INSTRUMENTS INC 发明人 OKAMOTO MITSUJI
分类号 H01L27/146;H01L31/10 主分类号 H01L27/146
代理机构 代理人
主权项
地址