发明名称 MANUFACTURING METHOD OF SILICON
摘要 PROBLEM TO BE SOLVED: To provide a manufacturing method of silicon which can manufacture silicon at a lower electric power consumption, at a low cost and efficiently. SOLUTION: The method comprises supplying a raw material silicon A into a reaction vessel 1 that is composed of a cylindrical crucible body 2 and a lid part 3, then heating the silicon A at a temperature of not lower than 1,000°C and not higher than the melting point of silicon, passing a reaction gas G of either a silane-based gas or a silane-based gas and hydrogen gas to the heated silicon through a raw material gas introducing pipe 4 that is located on the lid part 3, growing silicon that is generated by the decomposition or reduction of the silane-based gas onto the surface of the raw material silicon A, then removing the lid part 3 from the reaction vessel 1, and recovering the silicon within the reaction vessel 1 by heating it at a temperature of not lower than its melting point and by melting and falling it. COPYRIGHT: (C)2008,JPO&INPIT
申请公布号 JP2008184365(A) 申请公布日期 2008.08.14
申请号 JP20070019721 申请日期 2007.01.30
申请人 ULVAC JAPAN LTD 发明人 NAGATA HIROSHI;HIROSE YOICHI;OKUBO HIROO
分类号 C01B33/029 主分类号 C01B33/029
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