Method of low temperature wafer bonding through Au/Ag diffusion

摘要

Two wafers are bonded. One wafer has a gold (Au) film on its surface; the other, a silver (Ag) film. The wafers are stuck together for a bonding process between the Au and the Ag films. Thus, an Au/Ag bonding layer is formed. The bonding layer has a high melting point and so is suitable for high-temperature processes. The bonding process also do no harm to devices on the bonded wafer.