发明名称 Bump structure and manufacturing method thereof
摘要 A bump structure comprises: a plurality of landing pads, a passive element, and a plurality of conductive bumps on a wafer. A method for manufacturing the bump comprises: providing a wafer with a plurality of landing pads, wherein the landing pads comprise a first landing pad and a second landing pad; forming a metal layer on each of the landing pads; forming a first photoresist to cover a surface of the wafer; forming a first opening on the first photoresist, wherein the first opening is disposed between the first landing pad and the second landing pad and exposes the partial metal layer on the first landing pad and the second landing pad; forming an electric resistance material in the first opening to electrically connect the first landing pad and the second landing pad; performing a curing step; and forming a plurality of conductive bumps on the metal layer of each of the landing pads.
申请公布号 US2008191346(A1) 申请公布日期 2008.08.14
申请号 US20070889955 申请日期 2007.08.17
申请人 ADVANCED SEMICONDUCTOR ENGENEERING, INC. 发明人 SU CHENG-HSUCH;HSIEH CHUCH-AN
分类号 H01L23/48;H01L21/44 主分类号 H01L23/48
代理机构 代理人
主权项
地址