| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor device reduced in both size and thickness. <P>SOLUTION: The semiconductor device has a wiring pattern formed in an insulation layer, semiconductor structures mounted on the front and rear faces of the wiring pattern, and via holes for interlayer connection which are formed through the insulation layer. The method of manufacturing the semiconductor device includes mounting the first semiconductor structure on one face of a metal foil; forming the wiring pattern by forming a circuit pattern in the metal foil; mounting the second semiconductor structure on the other face of the metal foil opposite from the one where the wiring pattern is formed; and forming the via holes for interlayer connection which penetrate the insulation layer. <P>COPYRIGHT: (C)2008,JPO&INPIT |
