| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device by which a high terminal breakdown voltage is obtained. SOLUTION: The semiconductor device includes a second first-conductive type semiconductor layer, a third second-conductive type semiconductor layer, a field insulating film provided on the second first-conductive type semiconductor layer and the third second-conductive type semiconductor layer at a terminal region, a field plate electrode which is provided on the field insulating film, and connected to a second main electrode or a control electrode, and a floating field plate electrode with a floating potential. The second first-conductive type semiconductor layer is provided on a main surface of a first first-conductive type semiconductor layer at an element region and the terminal region outside the element region. The third second-conductive type semiconductor layer forms a periodic arrangement structure together with the second first-conductive type semiconductor layer in a lateral direction which is almost parallel to the main face of the first first-conductive type semiconductor layer. The floating field plate electrode is provided on the field insulating film positioned outside rather than the field plate electrode, wherein its one portion overlaps with the field plate electrode with the insulating film intervened. COPYRIGHT: (C)2008,JPO&INPIT
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