| 摘要 |
PROBLEM TO BE SOLVED: To achieve both reduction in writing currents and improvement in MR ratio at reading. SOLUTION: The magnetoresistive effect element comprises first and second ferromagnetic layers 11A and 11B of which magnetizing directions are fixed mutually opposite; a third ferromagnetic layer 12, which is arranged between the first and second ferromagnetic layers 11A and 11B with magnetizing direction changing; a first non magnetic layer 13A arranged between the first ferromagnetic layer 11A and the third ferromagnetic layer 12; and a second non magnetic layer 13B arranged between the second ferromagnetic layer 11B and the third ferromagnetic layer 12. When a reading voltage Ir is biased, MR ratio of a first unit U1 is in inverse state, while the MR ratio of a second unit U2 is in normal state. When writing voltages Iw"0" and Iw"1" are biased, the MR ratio of the first and second units U1 and U2 are both in the normal state. COPYRIGHT: (C)2008,JPO&INPIT
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