| 摘要 |
PROBLEM TO BE SOLVED: To provide etching equipment or the like capable of forming a highly precise etching shape even when the hole shape has a high aspect ratio. SOLUTION: The etching equipment 1 comprises: a processing chamber 11; a base 15 for placing a silicon substrate K; a gas supplying device 23 for supplying an etching gas, an anti-etching layer forming gas, and a carrier gas to the processing chamber 11; coils 33; a high-frequency power source 34 for the coils; a high-frequency power source 35 for the base; and a control device 40 for performing an etching step of supplying the etching gas, a first anti-etching layer forming step of supplying the anti-etching layer formation gas, and a second anti-etching layer forming step of supplying the anti-etching layer forming gas and carrier gas. The control device 40 performs the second anti-etching layer forming step after performing the etching step and first anti-etching layer forming step repeatedly for given times. Thereafter, the control device 40 performs the etching step and first anti-etching layer forming step again repeatedly. COPYRIGHT: (C)2008,JPO&INPIT
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