| 摘要 |
PROBLEM TO BE SOLVED: To provide a reliable joined body of silicon substrates and also to provide a method suitable for manufacturing the same. SOLUTION: A silicon oxide film and a metal film are deposited in this order on a joint plane of each of a first and a second silicon substrate, and the metal films of the first and second silicon substrates are joined to fabricate the joined body. The method of manufacturing the joined body includes a dipping process wherein the joint planes of the first and second silicon substrates are dipped in a mixed solution containing hydrogen peroxide, water, and one component selected from among a group of ammonia, hydrogen chloride, and sulphuric acid; a metal film formation process wherein the metal film is formed on the joint planes of the first and second silicon substrate which have been subjected to the dipping process; and a joining process of joining the metal films of the first and second silicon substrates which have been formed in the metal film formation process. COPYRIGHT: (C)2008,JPO&INPIT
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