发明名称 Methods of writing partial page data in a non-volatile memory device
摘要 A method of writing partial page data in a non-volatile memory device includes, reading data from a second block when the size of a last page of data to be written in a page of a first block is smaller than a size of the page of the first block, wherein a size of the read data is given by the size of the page of the first block minus the size of the last page of data; storing together data of the last page and the data read from the second block in a buffer; and writing the data stored in the buffer in the first block.
申请公布号 US2008195804(A1) 申请公布日期 2008.08.14
申请号 US20080069764 申请日期 2008.02.13
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 KIM JIN-HYUK;CHOI CHANG-EUN;KIM YOUNG-GON
分类号 G06F12/00 主分类号 G06F12/00
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