| 摘要 |
A power diode having a silicon mesa atop the drift region includes a first contact positioned on the silicon mesa. The silicon mesa is highly doped p-type or n-type, and the anode may be formed on the mesa. The mesa may include two separate silicon layers, one of which is a Schottky barrier height layer. Under a forward bias, the silicon mesa provides carriers to achieve desirable forward current characteristics. The substrate has a significantly reduced thickness. The diode achieves reverse voltage blocking capability by implanting junction barrier Schottky wells within the body of the diode. The diode utilizes a deeper portion of the drift region to support the reverse bias. The method of forming the diode with a silicon mesa includes forming the mesa within a window on the diode or by thermally or mechanically bonding the silicon layer to the drift region.
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