| 摘要 |
A method for repairing a defect on a photomask includes coating a resist on a photomask substrate. The photomask substrate includes phase shift layer patterns formed on the photomask substrate, light blocking layer patterns formed over the phase shift layer patterns and a defect formed between adjacent phase shift layer patterns. The resist is etched to expose the defect such that the photomask substrate is not exposed. The defect is etched to remove the defect. The resist prevents the photomask substrate from being etched. The resist is then removed.
|
