发明名称 TARGET FORMED OF SINTERING-RESISTANT MATERIAL OF HIGH-MELTING POINT METAL ALLOY, HIGH-MELTING POINT METAL SILICIDE, HIGH-MELTING POINT METAL CARBIDE, HIGH-MELTING POINT METAL NITRIDE, OR HIGH-MELTING POINT METAL BORIDE, PROCESS FOR PRODUCING THE TARG
摘要 This invention provides a target formed of a sintering-resistant material of a high-melting point metal alloy, a high-melting point metal silicide, a high-melting point metal carbide, a high-melting point metal nitride, or a high-melting point metal boride, characterized by having a structure comprising a target material formed of a sintering-resistant material of a high-melting point metal alloy, a high-melting point metal silicide, a high-melting point metal carbide, a high-melting point metal nitride, or a high-melting point metal boride and a high-melting point metal plate other than the target material joined to each other, and a process for producing the target. In the target and the production process of the target, a target formed of a sintering-resistant material of a high-melting point metal alloy, a high-melting point metal silicide, a high-melting point metal carbide, a high-melting point metal nitride, or a high-melting point metal boride, which has poor machinability, can relatively easily be produced. Further, the occurrence of cracking in the target production and high power sputtering can be effectively suppressed. Furthermore, a reaction of the material for a target with a die in hot pressing can be suppressed, and the warpage of the target can be reduced.
申请公布号 WO2008096648(A1) 申请公布日期 2008.08.14
申请号 WO2008JP51364 申请日期 2008.01.30
申请人 NIPPON MINING & METALS CO., LTD.;YAMAKOSHI, YASUHIRO 发明人 YAMAKOSHI, YASUHIRO
分类号 C23C14/34;B23K20/00;C04B37/02 主分类号 C23C14/34
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