| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To solve the problems caused by charge-up at the correction of the defects of an isolated pattern, in a photomask that uses a focused ion beam microfabrication device. <P>SOLUTION: After an aerial wiring 7 of a metal deposited film is by focused ion beam (FIB) CVD formed between isolated patterns and electrically conducted to eliminate the influences due to charge-up, a defect 3 is corrected. The aerial wiring 7 of the metal deposited film which becomes unnecessary after correction is removed by ion beam etching. After an aerial wiring of a metal deposited film is formed by FIB-CVD in an X direction and a Y direction on an isolated pattern to eliminate the influences due to charge-up, the aerial wiring of the metal deposited film in the X and Y directions is used as a marker for correcting the drift during fabrication, and a defect is corrected, while the drift is corrected. The aerial wiring of the metal deposited film, which becomes unnecessary after correction, is removed by ion beam etching or AFM (atomic force microscope) scratch processing. <P>COPYRIGHT: (C)2008,JPO&INPIT</p> |
