| 摘要 |
PROBLEM TO BE SOLVED: To provide a display device provided with a thin-film transistor using a semiconductor film in which early failures are inhibited and highly precise display is made feasible by the downsizing of thin-film transistors. SOLUTION: In a thin-film transistor having a gate electrode 6 formed in a superstratum above a polycrystalline semiconductor film 4 by the interposition of a gate insulating film 5, the taper angleθ2 of the cross-section at the end of a pattern of the polycrystalline semiconductor film 4 in a region where the polycrystalline semiconductor film 4 and the gate electrode 6 intersect with each other is formed smaller than taper anglesθ1 in other regions. COPYRIGHT: (C)2008,JPO&INPIT |
