| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a field effect transistor (FET), chief of which is diamond, which can accommodate high-frequency operation and an increase in current density and has an excellent controllability for threshold voltage, and has little variation in element characteristics in the plane of a wafer and little variation among lots. <P>SOLUTION: In the field effect transistor wherein a substrate 10, a diamond semiconductor layer 11, and a compound semiconductor layer 12 are formed in this order, the diamond semiconductor layer 11 is formed of (111)-plane diamond and the compound semiconductor layer 12 is formed of a (0001)-plane hexagonal compound semiconductor or (111)-plane hexagonal compound semiconductor. Due to this structure, there are positive fixed electric charges arising out of the spontaneous polarization effect or piezo polarization effect in the interface between an electron supply layer and the diamond semiconductor layer, and at the same time, a two-dimensional electron gas 13 is generated near the interface between the electron supply layer and the diamond semiconductor layer. <P>COPYRIGHT: (C)2008,JPO&INPIT |
