| 摘要 |
A method for improving across-wafer etch uniformity of semiconductor devices in an etching chamber, wherein the method includes: introducing a first flow of gas mixtures from a central gas distribution plate manifold; introducing a second flow of gas mixtures from an auxiliary gas feed; and controlling process parameters including one or more of: duration, power, pressure, and gas flow rates for the first and second flow of gas mixtures; wherein the central gas distribution plate manifold is positioned above the semiconductor wafer; wherein the auxiliary gas feed is positioned around the perimeter of the semiconductor wafer; and wherein the controlling of the process parameters of the central gas distribution plate manifold and the auxiliary gas feed is facilitated by independent controls.
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