| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor light-emitting device that is reduced in size and improved in brightness. <P>SOLUTION: The semiconductor light-emitting device A1 is provided with: a substrate 1; a semiconductor light-emitting element 2 that is formed in the substrate 1 and in which an n-type semiconductor layer 21, an active layer 22, a p-type semiconductor layer 23 are stacked; electrodes 5A and 5B that are formed in the substrate 1 and are away from the semiconductor light-emitting element 2; and a connection member 4A to electrically connect the p-type semiconductor layer 23 with the electrode 5A. At least a part of the connection member 4A covering the semiconductor light-emitting element 2 is transparent. <P>COPYRIGHT: (C)2008,JPO&INPIT |
