| 摘要 |
<P>PROBLEM TO BE SOLVED: To reduce the width of an element isolation layer but ensure the depth of the element isolation layer in microfabricating a semiconductor device. <P>SOLUTION: The semiconductor device 10 includes a silicon substrate 11, a first trench 12 formed on the surface of the silicon substrate 11, the first element isolation layer 13 embedded in the first trench 12, a selective growth silicon layer 14 that is formed on the silicon substrate 11 exposed from the first element isolation layer 13 by a selective epitaxial growth method, and a second element isolation layer 17 embedded in a second trench 16 that is formed of the upper surface of the first element isolation layer 13 and a side face of the selective growth silicon layer 14. <P>COPYRIGHT: (C)2008,JPO&INPIT |
