| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a tunnel-type magnetic detecting element which can particularly increase a rate of change of resistance (ΔR/R) as compared with the prior art. <P>SOLUTION: An insulating barrier layer 5 is formed by a laminated structure of a Ti-O layer 5a and a Ta-O layer 5b. When the sum of concentrations of Ti and Ta composing the insulating barrier layer 5 is 100 at%, the concentration of Ta is larger than 0 at% and is equal to or lower than 7 at%. Thus without changing a fixed magnetic layer and a free magnetic layer from a prior art configuration, a rate of change of resistance (ΔR/R) can be increased as compared with the prior art. <P>COPYRIGHT: (C)2008,JPO&INPIT</p> |
