VAPOR DEPOSITION METHOD FOR FORMING THIN FILM ON WAFER, AND VAPOR DEPOSITION APPARATUS FOR FORMING THIN FILM ON WAFER

摘要

PROBLEM TO BE SOLVED: To provide a vapor deposition method which can form a vapor deposition thin film while more precisely controlling temperatures of a wafer surface and a susceptor surface without increasing a cost more than necessary, and to provide a vapor deposition apparatus therefor. SOLUTION: The vapor deposition method for forming the thin film on the wafer 5 is used for forming the thin film on the wafer 5 mounted on a susceptor 6, and comprises the steps of: continually measuring at least temperatures of the wafer surface on the rotating susceptor 6 and the susceptor surface; extracting the temperatures of the wafer surface and/or the susceptor surface separately from the measured temperature data of the wafer surface and the susceptor surface, on the basis of predetermined changing rates of the temperatures; and forming the vapor deposition thin film while controlling the temperatures of the wafer surface and/or the susceptor surface based on the extracted temperatures of the wafer surface and/or the susceptor surface. COPYRIGHT: (C)2008,JPO&INPIT