| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device and a method of manufacturing the same, in which high integration and high reliability are obtained. SOLUTION: The semiconductor device has a plurality of first active regions of a semiconductor substrate, which are defined by a device isolation film, and disposed along a first direction, a plurality of bit line electrodes which are connected to the plurality of first active regions, and extend along a second direction, and a plurality of first barrier insulating layers which extend along a third direction so as to pass across cross between the two regions adjacent along the first direction of the plurality of first active regions. COPYRIGHT: (C)2008,JPO&INPIT
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