| 摘要 |
PROBLEM TO BE SOLVED: To provide a photodetector capable of improving photosensitivity especially in the blue wavelength of a 405 nm band without increasing the internal resistance of a light receiving part. SOLUTION: The photodetector 20 comprises: a semiconductor substrate 1; a semiconductor layer 2 formed on the semiconductor substrate and having a light receiving region A and a photoelectric conversion part for photoelectrically converting light received in the light receiving region to charges; a light transmissive insulating layer 3 formed on the semiconductor layer so as to cover the light receiving region; a light transmissive electrode part 6 formed in a range corresponding to the light receiving region on the insulating layer; and a charge extraction electrode 10 provided on the outer side of the light receiving region in the semiconductor layer for extracting charges photoelectrically converted in the photoelectric conversion part. COPYRIGHT: (C)2008,JPO&INPIT
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