发明名称 SPUTTER METHOD AND SPUTTER DEVICE
摘要 PROBLEM TO BE SOLVED: To provide a sputter method and a sputter device which can perform low-temperature and low-damage film formation with a simple configuration and with a high productivity even if a plurality of substrates are continuously subjected to film formation treatment. SOLUTION: The sputter method and sputter device are characterized in that low-temperature and low-damage film formation is performed in the first film formation part P1 of the first film formation region F1, so as to form an initial layer of film with a prescribed thickness on a substrate B, thereafter, the substrate B is moved to the second film formation part P2 of the second film formation region F2, and subsequently, film formation is performed at a high film formation rate, so as to form a second layer of film, thus a thin film is formed. COPYRIGHT: (C)2008,JPO&INPIT
申请公布号 JP2008184624(A) 申请公布日期 2008.08.14
申请号 JP20070016723 申请日期 2007.01.26
申请人 OSAKA VACUUM LTD;TOKYO ELECTRON LTD 发明人 UEDA YOSHIHIKO;MOYAMA KAZUKI;FUKUMORI KOJI
分类号 C23C14/56;C23C14/34;H01L51/50;H05B33/10 主分类号 C23C14/56
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