| 摘要 |
A manufacturing method of a semiconductor device, includes forming a porous organo-siloxane film containing a porogen component having carbon as a main component above a semiconductor substrate, forming an upper-side insulating film having at least one of film density and film composition different from that of the porous organo-siloxane film on the porous organo-siloxane film, and applying at least one of an electron beam and an ultraviolet ray to the porous organo-siloxane film and upper-side insulating film to cause polymerization reaction of the porogen component in the porous organo-siloxane film.
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