| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a method for manufacturing a semiconductor device and to provide a polishing device by which dissolving rate of an interconnection material including Cu or Cu alloy is set at 100 nm/min or above and further the chemical mechanical polishing rate of the interconnection material including Cu or Cu alloy is improved. <P>SOLUTION: The method for manufacturing the semiconductor device includes a depositing process for depositing the interconnection material including Cu or Cu alloy over an insulating film, and a polishing process for polishing the deposited interconnection material by Chemical Mechanical Polishing with a polishing liquid. In the polishing process, the oxidation-reduction potential (ORP) of the polishing liquid is measured, and the measured oxidation-reduction potential (ORP) of the polishing liquid is controlled so as to be in the range of 400 to 700 mV vs Ag/AgCl. <P>COPYRIGHT: (C)2008,JPO&INPIT |
