| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a method of manufacturing a semiconductor device capable of filling a space formed by a depression in a substrate with an intermediate heat conduction material without leaving an air layer in the depression when the substrate having the depression is combined with a heat sink with the intermediate heat conduction material having flowability interposed between them in the semiconductor device, and capable of enhancing the thermal coupling between the substrate and the heat sink and reducing the thermal resistance of the semiconductor device. <P>SOLUTION: According to this method of manufacturing the semiconductor device, the substrate 14 of a laminated structure having a semiconductor chip 11 mounted on the front surface thereof and having the depression 31 in the rear surface thereof is attached to the heat sink 12 via a thermal compound 15 having flowability. The thermal compound is applied to the surface of the heat sink prior to attachment. It is also applied in a shape 32A formed radially from a center, and non-applied grooves 35 are radially extended from the center. <P>COPYRIGHT: (C)2008,JPO&INPIT |
