| 摘要 |
PROBLEM TO BE SOLVED: To provide a photodetector forming an optical sensor only by taking a step of introducing one of N-type and P-type impurities as an impurity introduction step, and also to provide an electro-optic device including the optical detector. SOLUTION: In a sensor circuit 310 of the photodetector 300, a main sensor 310A and a sub sensor 310B include: a semiconductor film 1w having a highly concentrated N-type first impurity introduced region 1y and a second impurity introduced region 1z formed on both sides of an intrinsic region 1x; and a translucent bias applying electrode 5a opposing the intrinsic region 1x through an insulation layer 4a, thus having the same structure as that of a thin film transistor. By applying voltage in the direction of turning OFF the thin film transistor to the bias applying electrode 5a and also applying predetermined voltage to between the first and second regions 1y and 1z, photocurrent flows when light is incident to the intrinsic region 1x. COPYRIGHT: (C)2008,JPO&INPIT |
