| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor laser element whose driving current is small and a projected image is not disturbed. SOLUTION: The semiconductor laser element includes an n-GaAs substrate, a multi-layer in which an n-clad layer, an active layer, a p-clad layer, and a p-contact layer are laminated on an n-GaAs substrate 2 in this order, a ridge which is formed by selectively removing from the upper surface of the p-contact layer to the predetermined depth of the p-clad layer, an insulating film which is formed on the upper side of the n-GaAs substrate and located on the portion from the side of the ridge to the surrounding of the n-GaAs substrate, a p-type electrode which is laminated on the p-contact layer of the ridge and formed on the insulating film, and an n-type electrode which is formed on the lower surface of the n-GaAs substrate. The semiconductor laser element is constituted in such a manner that the n-GaAs substrate has a forbidden band to be an absorption layer for the light of a light-emitting wavelength of the active layer, and a channel of a depth exceeding the active layer from the p-clad layer is located from the p-clad layer apart from the side edge of the ridge at a predetermined distance to the side edge of the active layer on the edge side to be a forward emitting surface along its edge, and the channel is covered with the insulating film. COPYRIGHT: (C)2008,JPO&INPIT |
