SEMICONDUCTOR DEVICE

摘要

Stress and arrangement of a film at the periphery of a gate electrode is optimized to apply a large stress (strain) to a channel region. Thus, carrier mobility of a MOSFET is improved. Provided is an n-channel MOSFET having (1) a compression stress film only on the gate electrode, or (2) a tensile stress film only on a gate side wall and a source/drain region, or (3) a compression stress film on the gate electrode and a tensile stress film on the gate side wall and the source/drain region. A p-channel MOSFET is provided with (A) a tensile stress film only on the gate electrode, or (B) a compression stress film only on the gate side wall and the source/drain region, or (C) a tensile stress film on the gate electrode and a compression stress film on the gate side wall source/drain region.