Method of Manufacturing a Semiconductor Device and Semiconductor Device Obtained With Such a Method

摘要

The invention relates to a method of manufacturing a semiconductor device ( 1.0 ) with a dual gate field effect transistor, in which method a semiconductor body ( 1 ) of a semiconductor material is provided at a surface thereof with a source region ( 2 ) and a drain region ( 3 ) of a first conductivity type and with a channel region ( 4 ) of a second conductivity type opposite to the first conductivity type between the source region ( 2 ) and the drain region ( 3 ) and with a first gate region ( 5 ) separated from the surface of the semiconductor body by a first gate dielectric ( 6 ) above the channel region ( 4 ) and with a second gate region ( 7 ) situated opposite to the first gate region ( 5 ) and formed within a recess ( 20 ) in an opposite surface of the semiconductor body ( 1 ) so as to be separated from the channel region ( 4 ) by a second gate dielectric ( 8 ), wherein the recess ( 20 ) is formed by means of a local change of the doping ( 9 ) of the channel region ( 4 ) and by performing an etching step starting from the opposite surface of the semiconductor body ( 1 ).