发明名称 |
Semiconductor devices and methods of manufacturing the same |
摘要 |
Semiconductor devices and methods of manufacturing the same are disclosed. A disclosed semiconductor device comprises a semiconductor substrate; a gate formed on the semiconductor substrate; a gate oxide layer interposed between the semiconductor substrate and the gate; and source and drain regions formed within the substrate at opposite sides of the gate. The gate oxide layer has a first region with a first thickness and a second region with a second thickness. The second thickness is thicker than the first thickness.
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申请公布号 |
US2008191290(A1) |
申请公布日期 |
2008.08.14 |
申请号 |
US20080012423 |
申请日期 |
2008.01.31 |
申请人 |
PARK GEON-OOK |
发明人 |
PARK GEON-OOK |
分类号 |
H01L21/336;H01L29/78;H01L29/423;H01L29/43 |
主分类号 |
H01L21/336 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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