摘要 |
A resist polymer (22) that has nano-scale patterns of sub-lithographic openings (26) located therein that are oriented substantially perpendicular to its major surfaces is provided. Such a resist polymer having the nano-scale patterns is used as an etch mask transferring nano-scale patterns to an underlying substrate such as, for example, dielectric material (12). After the transferring of the nano-scale patterns into the substrate, nano-scale openings having a width of less than 50 nm are created in the substrate. The presence of the nano-scale voids in a dielectric material lowers the dielectric constant, k, of the original dielectric material. In accordance with an aspect of the present invention, the inventive resist polymer comprises a copolymer that includes a first monomer unit (A) that contains a Si-containing component, and a second monomer unit (B) that contains an organic component, wherein said two monomer units (A and B) have different etch rates.
|
申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION;CHEN, KUANG-JUNG;HUANG, WU-SONG;LI, WAI-KIN;LIN, YI-HSIUNG, S. |
发明人 |
CHEN, KUANG-JUNG;HUANG, WU-SONG;LI, WAI-KIN;LIN, YI-HSIUNG, S. |