GALLIUM NITRIDE COMPOUND SEMICONDUCTOR LIGHT-EMITTING DEVICE AND METHOD FOR MANUFACTURING SAME

摘要

Disclosed are a gallium nitride compound semiconductor light-emitting device having excellent light-extraction efficiency, and a method for manufacturing such a gallium nitride compound semiconductor light-emitting device. Specifically disclosed is a gallium nitride compound semiconductor light-emitting device wherein an n-type semiconductor layer (13) composed of a gallium nitride compound semiconductor, a light-emitting layer (14) and a p-type semiconductor layer (15) are arranged on a substrate (11) in this order. A light-transmitting positive electrode (16) is arranged on the p-type semiconductor layer (15) and a positive electrode bonding pad (17) is formed on the light-transmitting positive electrode (16), while a negative electrode bonding pad (18) is formed on the n-type semiconductor layer (13). In this gallium nitride compound semiconductor light-emitting device, a surface (16a) of the light-transmitting positive electrode (16) at least partially has an irregular rough surface.