| 摘要 |
A method for forming an IMD(intermetal dielectric) of a semiconductor device is provided to improve the filling characteristic of an IMD by patterning a metal interconnection and by forming a spacer on the sidewall of the metal interconnection. A metal interconnection layer(103) and a hard mask layer(104) are sequentially formed on a semiconductor substrate(100). The metal interconnection layer is patterned to form a metal interconnection by an etch process using the hard mask layer. A spacer(105') is formed on the sidewall of the metal interconnection. An IMD layer(106) is formed on the resultant structure. An interlayer dielectric and a metal barrier layer can sequentially be formed between the semiconductor substrate and the metal interconnection layer.
|
