发明名称 |
GaN epitaxial layer over growth method |
摘要 |
Nanostructures formed on a surface of a substrate are used as nucleation sites for epitaxial overgrowth of bulk gallium nitride semiconductor crystals including device layers. Nanocolumn nucleation sites are formed using a nanostructured mask on the substrate by etching the substrate or by selective area growth in the mask openings. The epitaxial growth method is used for fabricating gallium nitride optoelectronic devices. |
申请公布号 |
GB2446471(A) |
申请公布日期 |
2008.08.13 |
申请号 |
GB20070008281 |
申请日期 |
2007.04.30 |
申请人 |
UNIVERSITY OF BATH;APEX OPTOELECTRONICS LIMITED;NANOGAN LIMITED |
发明人 |
WANG NANG WANG |
分类号 |
H01L21/20;C30B25/18 |
主分类号 |
H01L21/20 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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