发明名称 LIGHT-EMITTING DEVICE AND METHOD FOR MANUFACTURING SAME
摘要 Disclosed is a light-emitting device (1) comprising a buried current blocking layer (9) wherein the oxygen concentration in at least a part of the current blocking layer (9) is higher than the oxygen concentration of a light-emitting layer and the current blocking layer (9) has a thickness of 5-100 nm. The light-emitting device (1) comprises an etching stop layer (24) below the current blocking layer (9), and the etching stop layer (24) has oxidation resistance. This light-emitting device (1) is improved in the current-narrowing effect, thereby achieving a high output with a low forward voltage. Also disclosed is a method for manufacturing such a light-emitting device (1).
申请公布号 KR20080074870(A) 申请公布日期 2008.08.13
申请号 KR20087010711 申请日期 2008.05.02
申请人 DOWA ELECTRONICS MATERIALS CO., LTD. 发明人 SAKAMOTO RYO;IWATA MASATOSHI;TSUJIKAWA SUSUMU;KOBAYASHI YOSHIYUKI
分类号 H01L33/06;H01L33/10;H01L33/14;H01L33/30 主分类号 H01L33/06
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