发明名称 |
LIGHT-EMITTING DEVICE AND METHOD FOR MANUFACTURING SAME |
摘要 |
Disclosed is a light-emitting device (1) comprising a buried current blocking layer (9) wherein the oxygen concentration in at least a part of the current blocking layer (9) is higher than the oxygen concentration of a light-emitting layer and the current blocking layer (9) has a thickness of 5-100 nm. The light-emitting device (1) comprises an etching stop layer (24) below the current blocking layer (9), and the etching stop layer (24) has oxidation resistance. This light-emitting device (1) is improved in the current-narrowing effect, thereby achieving a high output with a low forward voltage. Also disclosed is a method for manufacturing such a light-emitting device (1).
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申请公布号 |
KR20080074870(A) |
申请公布日期 |
2008.08.13 |
申请号 |
KR20087010711 |
申请日期 |
2008.05.02 |
申请人 |
DOWA ELECTRONICS MATERIALS CO., LTD. |
发明人 |
SAKAMOTO RYO;IWATA MASATOSHI;TSUJIKAWA SUSUMU;KOBAYASHI YOSHIYUKI |
分类号 |
H01L33/06;H01L33/10;H01L33/14;H01L33/30 |
主分类号 |
H01L33/06 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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