发明名称 |
SEMICONDUCTOR SURFACE TREATMENT AGENT |
摘要 |
<p>A semiconductor surface treatment agent containing a fluorine compound, a water-soluble organic solvent and an inorganic acid, with the balance being water and a method for manufacturing a semiconductor device by etching a high dielectric constant insulating material using the subject semiconductor surface treatment agent are provided. According to the present invention, it is possible to selectively and efficiently etch a high dielectric constant insulating material to be used in a transistor formation process of the semiconductor device manufacture; and it is also possible to achieve etching with ease within a short period of time even for a high dielectric constant insulating material to which etching is hardly applied.</p> |
申请公布号 |
EP1956644(A1) |
申请公布日期 |
2008.08.13 |
申请号 |
EP20060833742 |
申请日期 |
2006.11.30 |
申请人 |
MITSUBISHI GAS CHEMICAL COMPANY, INC. |
发明人 |
YAGUCHI, KAZUYOSHI;SHIMADA, KENJI;ABE, KOJIRO |
分类号 |
H01L21/308;H01L21/304;H01L29/78 |
主分类号 |
H01L21/308 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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