| 摘要 |
<p>A method for manufacturing a semiconductor device is provided to completely remove a photo resist used in a semiconductor device manufacture process by immersing a semiconductor substrate into a sulfuric acid peroxide mixture solution. A cleaning process is performed to remove a photo resist from a semiconductor substrate. In the cleaning process, the semiconductor substrate is immersed into an SPM(Sulfuric Acid peroxide Mixture) solution of which temperature is temporarily raised due to a spiked deionized water. The photo resist is hardened by an ion implantation during a semiconductor device manufacture process. The cleaning process uses the SPM solution of which the deionized water is in a flux of 10 to 500 cc/minute. The cleaning process is performed by immersing the semiconductor substrate into the SPM solution during 5 to 10 minutes.</p> |
