Emitter switching configuration and corresponding integrated structure

摘要

An Emitter Switching configuration is described, which comprises at least a bipolar transistor (T1) and a MOS transistor (M1) having a common conduction terminal (E1). The Emitter Switching configuration according to the invention further comprises a Zener diode (DZ3) inserted between a control terminal (B1) of the bipolar transistor (T1) and the common conduction terminal (E1). A monolithic structure is also described, which is effective to implement an Emitter Switching configuration according to the invention.