发明名称 APPARATUS FOR PRODUCING GAS, VESSEL FOR SUPPLYING GAS AND GAS FOR USE IN MANUFACTURING ELECTRONIC DEVICE
摘要 <p>An apparatus for producing a gas using a raw material gas having high reactivity, in particular, a fluorinated hydrocarbon, or a vessel for supplying the gas, characterized in that the surface of a portion thereof contacting with the gas has an average roughness of 1 µm or less in terms of a center line average roughness Ra. It is preferred that an oxide-based passivated film such as a film based on chromium oxide, aluminum oxide, yttrium oxide, magnesium oxide or the like is formed on the surface having a roughness controlled as above. The above apparatus and vessel can be suitably used for preventing the contamination of a raw material gas originated from a gas production apparatus or a vessel for supplying the gas.</p>
申请公布号 KR100851791(B1) 申请公布日期 2008.08.13
申请号 KR20067019435 申请日期 2006.09.21
申请人 发明人
分类号 F17C1/10;C23C4/10;C23C8/02;C23C8/16;C23C8/18;C23C30/00 主分类号 F17C1/10
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