发明名称 ANALYZING APPARATUS, PROCESSING APPARATUS, MEASURING INSTRUMENT, EXPOSURE APPARATUS, SUBSTRATE PROCESSING SYSTEM, ANALYSIS METHOD, AND PROGRAM
摘要 <p>The line width of a pattern on a substrate, which has been exposed and developed by an exposure apparatus, is measured by a measuring instrument. If an analyzing apparatus determines that this line width is abnormal (step 303), the analyzing apparatus identifies an apparatus causing the line width variation according to the matching level between the measured value of the line width and the simulated value thereof (step 307); identifies a factor causing the line width variation according to a statistical value (step 311); and optimizes parameters (steps 315, 317). This improves the yield of a device fabrication process.</p>
申请公布号 KR20080074942(A) 申请公布日期 2008.08.13
申请号 KR20087013398 申请日期 2006.11.01
申请人 NIKON CORPORATION 发明人 OKITA SHINICHI
分类号 H01L21/66;H01L21/027 主分类号 H01L21/66
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